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1 cgh27030 30 w, 28v, gan hemt for linear communications ranging from vhf to 3 ghz crees cgh27030 is a gallium nitride (gan) high electron mobility transistor (hemt) designed specifcally for high effciency, high gain and wide bandwidth capabilities, which makes the cgh27030 ideal for vhf, comms, 3g, 4g, lte, 2.3-2.9ghz wimax and bwa amplifer applications. the unmatched transistor is available in both screw-down, fange and solder-down, pill packages. package type: 440196 and 440166 pn: cgh27030p and cgh27030f re v 4.0 C ma y 2015 features ? vhf - 3.0 ghz operation ? 30 w peak power capability ? 15 db small signal gain ? 4.0 w p ave at < 2.0 % evm ? 28 % drain effciency at 4 w average power ? wimax fixed access 802.16-2004 ofdm ? wimax mobile access 802.16e ofdma typical performance over 2.3-2.7ghz (t c = 25?c) of demonstration amplifer parameter 2.3 ghz 2.4 ghz 2.5 ghz 2.6 ghz 2.7 ghz units small signal gain 15.6 15.5 15.3 15.1 15.2 db evm at p ave = 36 dbm 1.73 1.85 1.85 1.77 1.43 % drain effciency at 36 dbm 28.1 28.7 28.9 27.9 27.5 % input return loss 6.6 6.2 6.0 6.1 7.0 db note: measured in the CGH27030F-AMP amplifer circuit, under 802.16 ofdm, 3.5 mhz channel bw, 1/4 cyclic prefx, 64 qam modulated burst, 5 ms burst, symbol length of 59, coding type rs-cc, coding rate type 2/3, par = 9.8 db @ 0.01 % probability on ccdf. subject to change without notice. www.cree.com/rf
2 absolute maximum ratings (not simultaneous) at 25?c case temperature parameter symbol rating units conditions drain-source voltage v dss 84 volts 25?c gate-to-source voltage v gs -10, +2 volts 25?c power dissipation p diss 14 watts storage temperature t stg -65, +150 ?c operating junction temperature t j 225 ?c maximum forward gate current i gmax 4.0 ma 25?c maximum drain current 1 i dmax 3.0 a 25?c soldering temperature 2 t s 245 ?c screw torque 60 in-oz thermal resistance, junction to case 3 r jc 4.8 ?c/w 85?c case operating temperature 3 t c -40, +150 ?c note: 1 current limit for long term, reliable operation. 2 refer to the application note on soldering at www.cree.com/rf/document-library 3 measured for the cgh27030f at p diss = 14 w electrical characteristics (t c = 25?c) characteristics symbol min. typ. max. units conditions dc characteristics 1 gate threshold voltage v gs(th) -3.8 -3.0 -2.3 v dc v ds = 10 v, i d = 7.2 ma gate quiescent voltage v gs(q) C -2.7 C v dc v ds = 28 v, i d = 150 ma saturated drain current i ds 5.8 7.0 - a v ds = 6.0 v, v gs = 2 v drain-source breakdown voltage v br 120 C C v dc v gs = -8 v, i d = 7.2 ma rf characteristics 2,3 (t c = 25 ? c, f 0 = 2.5 ghz unless otherwise noted) small signal gain g ss 12.5 14.5 C db v dd = 28 v, i dq = 150 ma drain effciency 4 23.0 28.0 C % v dd = 28 v, i dq = 150 ma, p ave = 4 w error vector magnitude evm C 2.0 C v dd = 28 v, i dq = 150 ma, p ave = 4 w output mismatch stress vswr C C 10 : 1 y no damage at all phase angles, v dd = 28 v, i dq = 150 ma p ave = 4.0 w ofdm p ave dynamic characteristics 5 input capacitance c gs C 9.0 C pf v ds = 28 v, v gs = -8 v, f = 1 mhz output capacitance c ds C 2.6 C pf v ds = 28 v, v gs = -8 v, f = 1 mhz feedback capacitance c gd C 0.4 C pf v ds = 28 v, v gs = -8 v, f = 1 mhz notes: 1 measured on wafer prior to packaging. 2 measured in the CGH27030F-AMP test fxture. 3 under 802.16 ofdm, 3.5 mhz channel bw, 1/4 cyclic prefx, 64 qam modulated burst, 5 ms burst, symbol length of 59, coding type rs-cc, coding rate type 2/3, par = 9.8 db @ 0.01 % probability on ccdf. 4 drain effciency = p out / p dc. 5 capacitance values include package parasitics. cgh27030f rev 4.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2007-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
3 typical wimax performance small signal s-parameters vs frequency measured in CGH27030F-AMP v dd = 28 v, i dq = 150 ma typical evm and effciency versus frequency measured in CGH27030F-AMP v dd = 28 v, i dq = 150 ma, 802.16-2004 ofdm, par=9.8 db, p ave = 5 w note: under 802.16 ofdm, 3.5 mhz channel bw, 1/4 cyclic prefx, 64 qam modulated burst, symbol length of 59, coding type rs-cc, coding rate type 2/3 , par = 9.8 db @ 0.01 % probability on ccdf. - 5 -4 -3 -2 -1 0 10 12 14 16 18 20 s1 1 ( d b ) s21 ( d b ) s21 -10 -9 -8 -7 -6 - 5 0 2 4 6 8 10 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 s1 1 ( d b ) s21 ( d b ) frequency (ghz) s21 s11 s11 20% 24% 28% 32% 36% 40% 2.5 3.0 3.5 4.0 4.5 5.0 ef f i ci en cy evm ( % ) evm @ 36 dbm evm @ 25 dbm efficiency @ 36 dbm efficiency evm @ 25 dbm 0% 4% 8% 12% 16% 20% 0.0 0.5 1.0 1.5 2.0 2.5 2.3 2.4 2.5 2.6 2.7 ef f i ci en cy evm ( % ) frequency (ghz) evm @ 36 dbm 25 dbm cgh27030f rev 4.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2007-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
4 typical wimax performance drain effciency and evm vs output power measured in CGH27030F-AMP v dd = 28 v, i dq = 150 ma, 802.16-2004 ofdm, par = 9.8 db typical gain and effciency versus output power measured in CGH27030F-AMP v dd = 28 v, i dq = 150 ma, 802.16-2004 ofdm, par=9.8 db note: under 802.16 ofdm, 3.5 mhz channel bw, 1/4 cyclic prefx, 64 qam modulated burst, symbol length of 59, coding type rs-cc, coding rate type 2/3 , par = 9.8 db @ 0.01 % probability on ccdf. 20% 24% 28% 32% 36% 40% 2.5 3.0 3.5 4.0 4.5 5.0 d r ai n ef f i ci en cy evm ( % ) evm drain efficiency efficiency 0% 4% 8% 12% 16% 20% 0.0 0.5 1.0 1.5 2.0 2.5 22 24 26 28 30 32 34 36 d r ai n ef f i ci en cy evm ( % ) output power (dbm) evm 20% 22% 24% 26% 28% 30% 32% 34% 36% 38% 40% 10 11 12 13 14 15 16 17 18 19 20 d r ai n e f f i ci en cy gai n ( d b ) gain 0% 2% 4% 6% 8% 10% 12% 14% 16% 18% 20% 0 1 2 3 4 5 6 7 8 9 10 20 22 24 26 28 30 32 34 36 38 d r ai n e f f i ci en cy gai n ( d b ) power output (dbm) gain efficiency efficiency cgh27030f rev 4.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2007-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
5 typical performance data simulated maximum available gain and k factor of the cgh27030f v dd = 28 v, i dq = 150 ma typical noise performance simulated minimum noise figure and noise resistance vs frequency of the cgh27030 v dd = 28 v, i dq = 150 ma electrostatic discharge (esd) classifcations parameter symbol class test methodology human body model hbm 1a (> 250 v) jedec jesd22 a114-d charge device model cdm ii (200 < 500 v) jedec jesd22 c101-c mag (db) k factor minimum noise figure (db) noise resistance (ohms) cgh27030f rev 4.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2007-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
6 source and load impedances frequency (mhz) z source z load 500 7.75 + j15.5 20 + j5.2 1000 3.11 + j5.72 17 + j6.66 1500 2.86 + j1.63 16.8 + j3.2 2500 1.2 - j3.26 9.41 + j3.2 3500 1.31 - j7.3 5.85 - j0.51 note 1. v dd = 28v, i dq = 250ma in the 440166 package. note 2. optimized for power gain, p sat and pae. note 3. when using this device at low frequency, series resistors should be used to maintain amplifer stability. cgh27030 power dissipation de-rating curve note 1. area exceeds maximum case operating temperature (see page 2). d z source z load g s 0 2 4 6 8 10 12 14 16 0 25 50 75 100 125 150 175 200 225 250 po w er d i ssi p ati o n ( w ) maximum case temperature (c) cgh27030 average power dissipation de-rating curve note 1 cgh27030f rev 4.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2007-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
7 CGH27030F-AMP demonstration amplifer circuit bill of materials designator description qty r1 res,1/16w,0603,1%,100 ohms 1 r2 res,1/16w,0603,1%,47 ohms 1 c5 cap, 470pf, 5%,100v, 0603 1 c15 cap, 33 uf, 20%, g case 1 c14 cap, 1.0uf, 100v, 10%, x7r, 1210 1 c7 cap 10uf 16v tantalum 1 c12 cap, 100.0pf, +/-5%, 0603 1 c1 cap, 1.6pf, +/-0.1pf, 0603 1 c2 cap, 1.8pf, +/-0.1pf, 0603 1 c3,c10 cap, 10.0pf,+/-5%, 0603 2 c4,c11 cap, 39pf, +/-5%, 0603 2 c8,c9 cap, 3.0pf, +/-0.1pf, 0603 2 c6,c13 cap,33000pf, 0805,100v, x7r 2 j3,j4 conn sma str panel jack recp 1 j2 header rt>plz.1cen lk 2 pos 1 j1 header rt>plz .1cen lk 5pos 1 - pcb, ro4350b, er = 3.48, h = 20 mil 1 - cgh27030f 1 CGH27030F-AMP demonstration amplifer circuit cgh27030f rev 4.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2007-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
8 CGH27030F-AMP demonstration amplifer circuit schematic CGH27030F-AMP demonstration amplifer circuit outline cgh27030f rev 4.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2007-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
9 typical package s-parameters for cgh27030 (small signal, v ds = 28 v, i dq = 150 ma, angle in degrees) frequency mag s11 ang s11 mag s21 ang s21 mag s12 ang s12 mag s22 ang s22 500 mhz 0.910 -127.91 18.04 106.46 0.024 20.12 0.314 -103.83 600 mhz 0.904 -137.21 15.52 100.35 0.025 14.75 0.306 -111.67 700 mhz 0.900 -144.50 13.58 95.23 0.025 10.38 0.302 -117.66 800 mhz 0.897 -150.40 12.04 90.78 0.025 6.69 0.302 -122.33 900 mhz 0.895 -155.33 10.80 86.81 0.026 3.48 0.303 -126.06 1.0 ghz 0.894 -159.54 9.78 83.20 0.026 0.63 0.306 -129.12 1.1 ghz 0.893 -163.21 8.93 79.85 0.026 -1.95 0.310 -131.69 1.2 ghz 0.892 -166.46 8.22 76.69 0.025 -4.31 0.315 -133.89 1.3 ghz 0.891 -169.40 7.60 73.70 0.025 -6.51 0.321 -135.84 1.4 ghz 0.891 -172.09 7.07 70.84 0.025 -8.56 0.327 -137.59 1.5 ghz 0.891 -174.57 6.61 68.08 0.025 -10.50 0.334 -139.20 1.6 ghz 0.891 -176.88 6.20 65.41 0.025 -12.34 0.341 -140.70 1.7 ghz 0.891 -179.07 5.84 62.81 0.025 -14.09 0.348 -142.13 1.8 ghz 0.891 178.86 5.52 60.28 0.025 -15.76 0.355 -143.51 1.9 ghz 0.891 176.88 5.23 57.79 0.024 -17.36 0.362 -144.85 2.0 ghz 0.891 174.98 4.96 55.35 0.024 -18.90 0.370 -146.16 2.1 ghz 0.891 173.13 4.73 52.95 0.024 -20.38 0.378 -147.46 2.2 ghz 0.892 171.34 4.51 50.59 0.024 -21.80 0.385 -148.75 2.3 ghz 0.892 169.60 4.32 48.25 0.023 -23.16 0.393 -150.03 2.4 ghz 0.892 167.89 4.14 45.95 0.023 -24.48 0.400 -151.32 2.5 ghz 0.892 166.20 3.97 43.66 0.023 -25.74 0.408 -152.61 2.6 ghz 0.893 164.55 3.82 41.40 0.023 -26.95 0.415 -153.91 2.7 ghz 0.893 162.91 3.68 39.16 0.022 -28.11 0.422 -155.21 2.8 ghz 0.893 161.28 3.54 36.93 0.022 -29.22 0.429 -156.52 2.9 ghz 0.893 159.67 3.42 34.72 0.022 -30.28 0.436 -157.84 3.0 ghz 0.894 158.06 3.31 32.52 0.021 -31.28 0.443 -159.17 3.2 ghz 0.894 154.86 3.10 28.16 0.021 -33.13 0.456 -161.87 3.4 ghz 0.894 151.65 2.92 23.83 0.020 -34.76 0.469 -164.62 3.6 ghz 0.895 148.41 2.77 19.52 0.020 -36.15 0.480 -167.42 3.8 ghz 0.895 145.14 2.63 15.23 0.019 -37.28 0.491 -170.27 4.0 ghz 0.895 141.81 2.50 10.94 0.018 -38.13 0.501 -173.18 4.2 ghz 0.895 138.42 2.39 6.64 0.018 -38.69 0.510 -176.16 4.4 ghz 0.896 134.95 2.29 2.32 0.017 -38.93 0.519 -179.20 4.6 ghz 0.896 131.39 2.20 -2.02 0.017 -38.84 0.526 177.68 4.8 ghz 0.896 127.73 2.12 -6.40 0.016 -38.43 0.533 174.48 5.0 ghz 0.895 123.96 2.05 -10.82 0.016 -37.69 0.539 171.19 5.2 ghz 0.895 120.07 1.99 -15.29 0.016 -36.68 0.545 167.80 5.4 ghz 0.895 116.05 1.93 -19.83 0.016 -35.43 0.549 164.31 5.6 ghz 0.895 111.90 1.87 -24.44 0.016 -34.05 0.553 160.70 5.8 ghz 0.895 107.59 1.82 -29.13 0.016 -32.64 0.556 156.95 6.0 ghz 0.895 103.14 1.78 -33.91 0.016 -31.32 0.559 153.06 to download the s-parameters in s2p format, go to the cgh27030 product page and click on the documentation tab. cgh27030f rev 4.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2007-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
10 product dimensions cgh27030f (package type 440166) product dimensions cgh27030p (package type 440196) cgh27030f rev 4.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2007-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
11 product ordering information order number description unit of measure image cgh27030f gan hemt each cgh27030p gan hemt each cgh27030f-tb test board without gan hemt each CGH27030F-AMP test board with gan hemt installed each cgh27030f rev 4.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2007-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
12 disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death or in applications for planning, construction, maintenance or dir ect operation of a nuclear facility. for more information, please contact: cree, inc. 4600 silicon drive durham, north carolina, usa 27703 www.cree.com/rf sarah miller marketing cree, rf components 1.919.407.5302 ryan baker marketing & sales cree, rf components 1.919.407.7816 tom dekker sales director cree, rf components 1.919.407.5639 cgh27030f rev 4.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2007-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.

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